CRM Microelectronics is committed to promoting a full range of MOSFET products with excellent performance, stable quality and highly competitive prices. We provide circuit designers with a comprehensive product selection, with breakdown voltages ranging from-200V to 800V, coupled with advanced assembly technologies, we offer a current selection range from 100mA to 400A. We focus on continuously improving the system efficiency and power density of MOSFET during the power conversion process, as well as its avalanche ruggedness during switching in harsh environments, to achieve fast and stable power management and power conversion.
By adopting high-density trench process technology and current path layout structure, CRM Microelectronics' MOSFET significantly reduces the on-state losses during the current conduction process. For high-frequency switching applications, by using high-performance SGT technology and clip assembly technology, we provide designers with a series of products with low switching losses. These products effectively reduce gate charge (Qg), especially the charge between the gate and the drain (Qgd), thus reducing the switching power losses during the fast switching process.
For half-bridge/full-bridge, synchronous rectification of AC/DC power supplies and other application terminals that require reverse free-wheeling, the MOSFET has been optimized for the Body Diode. While improving and accelerating the reverse free-wheeling capability, it reduces the peak current (Irm) and voltage (Vrm) during the reverse recovery process.
CRM Microelectronics combines advanced assemlby technologies to elevate the power, current and reliability of MOSFET to new heights, effectively increasing the work efficiency of users in mounting MOSFET on circuit boards and reducing costs.