CRM Microelectronics will provide GaN HEMT power devices with reliable quality, a complete variety, and excellent performance. The partnering wafer fabrication plant has a 40-year history and holds industrial-grade and automotive-grade standard certifications, with ISO 9001 and IATF 16949 qualifications. The product yield can reach 90%-95%, and its manufacturing process is globally leading. Based on advanced power device design, wafer manufacturing technology, stable and reliable packaging technology, and excellent quality control, we are committed to providing customers with cost-effective and highly reliable power device products.
This series of products can be applied in power adapters, wireless charging, motor drive and control, photovoltaic and energy storage systems, and automotive electronics. GaN HEMT plays a crucial role in improving overall system efficiency, reducing system costs, and minimizing system size.

The product packaging will include DFN8x8-8L, PDFN5x6-8L, TOLL, TO247-3L, etc. in the future.