Through process and device structure optimization, CRM Microelectronics provides high-efficiency IGBT products. A delicate balance has been struck between Vcesat and switching losses, which can significantly improve system efficiency. At the same time, this series of products has good and stable short-circuit capability, excellent low-electromagnetic interference characteristics, and reliable switching speed control ability, providing sufficient guarantee for designers in terms of system reliability design.
     The new-generation seventh-generation micro-trench field-stop technology IGBT products adopt advanced micro-trench technology to greatly increase the device cell structure density. The Cell Pitch can be reduced to 1.2um. They also adopt optimized carrier storage design, multi-gradient back-side buffer layer design, and ultra-thin drift region process technology. Meanwhile, self-alignment process technology is used to greatly enhance the device current density and device reliability.